Feature: | Long Time Materials, Instant Materials |
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Shape: | Various Shape Avaible as Per Different Application |
Max Temperature: | 1620 |
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YUFENGREC®Recrystallized Silicon Carbide Kiln Furniture (RSIC), like reaction bonded silicon carbide, can be infiltrated with silicon metal. However, the infiltration process occurs after the primary sintering. This grain structure not only provides excellent material properties, but also enables extremely precise manufacturing along with high purity used in industries like semiconductor production.
it's unique characteristic enables the use of maximum temperature up to 1,600°C, higher than the other SiC refractories.
RSiC, produced by sintering fine SiC grain itself at very high temperature, has very high purity, 99% SiC composition. Suitable to apply firing raw materials or products which need to avoid contaminations. Used as sagger and plate etc.
RSIC batts performances widely in porcelain tableware ,porcelain sanitary ware , metal powder process and electricity produciton etc . due to its ourstanding thermal shock resistance and high thermal conductivity ,RSIC batts can be produced in many shapes ,such as plate , setting ring ,plate setter .etc
In additional ,if required ,One side or both side can be coated , any special shape batts is available according to customer's request.
* Porcelain sanitary ware
* Metal powder process
* High Temperature Strength .
* Outstanding Thermal Shock Resistance.
* Excellent Thermal Conductivity.
* Heavy loading weight under high temperature applications.
Shape Available of Recrystallized Silicon Carbide Kiln Furniture (RSIC)
* Beam * Nozzle
* Roller * Thermal Tube
* Plate * Structure parts
* Cooling Tube * Sagger
* Setters
Technical Data of Nitride Bonded Silicon Carbide Kiln Furniture
Item | Unit | Typical Index |
Physical Properties | ||
Max. Application Temperature | ºC | 1620 (Oxid) |
Bulk Density | g/cm3 | 2.65 - 2.75 |
Porosity | % | 15-18 |
Compression Strength | MPa | 600 |
Modulus of Rupture | MPa | 80-100( 20 ºC) |
MPa | 90-110 (1200 ºC) | |
MPa | 90-120 (1350 ºC) | |
Thermal Conductivity | W/m.k | 36.6 (1200 ºC) |
Coefficient of Thermal Expansion | K-1 X 10 -6 | 4.69 (1200 ºC) |
Young's Modulus | GPa | 220-260 |
Thermal Shock Resistance | Excellent | |
Chemical Composition | ||
SiC | % | 99 |